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  ? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 1 of 15 SG8080 2a output current igbt gate dri ve optocouple r SG8080 /h/s/tr rev03 (02/02/2015) 002352 description the SG8080 is an optically coupled 2a output current gate driver, designed to drive most 1200v / 100a igbts and mosfets. it is intended for driving high power igbts and mosfets used in m otor control invert er applications. the circuit consists of an infrared input led optically coupled to an integrated circuit which utilizes a high speed driver. the SG8080 comes standard in a miniature 8 pin dip package. schematic diagram agency approvals ? ul/c-ul approved to ul1577 ? vde approved to en60747-5-5 applications ? igbt / mosfet gate drives ? ac & brushless dc motor drives ? industrial inverters ? uninterruptable power supplies (ups) ? switch mode power supplies ordering information part number description SG8080 8 pin dip, (50/tube) SG8080-h 0.40 ( 10.16mm ) wide lead spacing ( vde0884 ) SG8080-s 8 pin smd, (50/tube) SG8080-str 8 pin smd, tape and reel (1000/reel) features ? high common mode rejection: 10kv/ ? s minimum @ v cm = 1500v ? 2a maximum peak output current ? fast switching speeds o 200ns maximum propagation delay ? i cc =5ma maximum supply current ? wide supply voltage range (10v to 20v) ? under voltage lockout protection (uvlo) with hysteresis ? broad temperature pe rformance range (-40c to 100c) ? low power dissipation (r on 1) ? rail-to-rail ou tput voltage ? high input to output isolation (5kv rms ) ? rohs / pb-free / reach compliant note: suffixes listed above are not included in marking on device for part number identification ** a 0.1f bypass capacitor must be connected between pins 5 & 8 (gnd & v cc ) truth table (positive logic) led v cc -v ee (positive going) turn on v cc -v ee (negative going) turn off v o off 0 C 30v 0 C 30v low on 0 C 11.5v 0 C 10v low on 11.5 C 13.5v 10 C 12v transition on 13.5 C 20v 12 C 20v high SG8080
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 2 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r parameter symbol min. typ. max. units test conditions fig. notes general maximum ratings storage temperature t st -55 - 125 c operating temperature t a -40 - 100 c isolation voltage v iso 5000 - - v rms supply voltage v cc 0 - 25 v solder temperature C wave (10 sec) t sol - - 260 c 8 total power dissipation p t - - 295 mw input maximum ratings average forward input current i f(avg) - - 25 ma reverse input voltage v r - - 5 v peak transient input current i f(tran) - - 1 a <1 ? s pulse width, 300pps input current (rise / fall time) t r(in) / t f(in) - - 200 ns input power dissipation p i - - 45 mw 9 output maximum ratings high peak output current i oh(peak) - - 2 a 1 low peak output current i ol(peak) - - 2 a 1 output voltage v o - - v cc v output power dissipation p o - - 250 mw 10 absolute maximum ratings, t a = 25c (unless otherwise specified) the values indicated are absolut e stress ratings. functional op eration of the device is not i mplied at these or any conditions in excess of those defined in electrical characteri stics section of this document. exposure to absolute maximum ratings may cause permanent damag e to the device and ma y adversel y affect reliabilit y . recommended operating conditions the values indicated are reco mmended for steady, consistent ope ration with optimal performance across the operating temperatur e range. parameter symbol min. typ. max. units test conditions fig. notes recommended specifications operating temperature t a -40 - 100 c supply voltage v cc 10 - 20 v input current (on) i fl(on) 10 - 16 ma input voltage (off) v f(off) -3.0 - 0.8 v
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 3 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r electrical characteristics, t a = 25c, v ee = ground and v cc = 30v (unless otherwise specified) parameter symbol min. typ. max. units test conditions fig. notes input specifications led forward voltage v f 1.2 1.4 1.8 v i f = 10ma 15 led forward voltage temperature coefficient v f / t - -1.24 - mv/c i f = 10ma led reverse voltage bv r 5 - - v i r = 10 ? a input threshold current (low to high) i flh - 2.9 5 ma v o > 5v, i o = 0a 9,16,21 input threshold voltage (high to low) v fhl 0.8 - - v v o < 5v, i o = 0a input capacitance c in - 33 - pf f = 1mhz, v f = 0v output specifications high level supply current i cch - 1 5 ma open v o , i f = 10 to 16ma 7,8 low level supply current i ccl - 1 5 ma open v o , v f = -3 to +0.8v 7,8 high level output current i oh -2 - - a v o = (v cc C 6v) 2,13,19 1 low level output current i ol 2 - - a v o = (v cc + 6v) 5,6,20 1 high level output voltage v oh v cc - 0.4 v cc -0.2 - v i f = 10ma, i o = -100ma 1,3,17 low level output voltage v ol - v ee +0.2 v ee +0.4 v i f = 0ma, i o = 100ma 4,16,18 under voltage lockout threshold v uvlo+ - 8.3 - v v o > 5v, i f = 10ma 22 v uvlo- - 7.7 - v v o < 5v, i f = 10ma 22 under voltage lockout hysteresis uvlo hys - 0.6 - v 22 isolation specifications withstand insulation test v iso 5000 - - v rh 40-60%, t = 1 min 2,3 input-output resistance r i-o - 10 12 - v i-o = 500v dc 2 input-output capacitance c i-o - 0.9 - pf f =1mhz 2
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 4 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r electrical characteristics, continued t a = 25c, v ee = ground and v cc = 30v (unless otherwise specified) parameter symbol min. typ. max. units test conditions fig. notes switching specifications propagation delay time to high output level t plh 100 150 200 ns i f = 7 to 16ma v cc = 15 to 30v v ee = ground rg = 10 cg = 10nf f = 10khz duty cycle = 50% 10 11 12 13 14 23 propagation delay time to low output level t phl 100 150 200 pulse width distortion pwd - - 65 7 propagation delay difference between any two parts pdd - - 90 4 output rise time (10 to 90%) t r - 25 - 23 output fall time (90 C 10%) t f - 25 - uvlo turn on delay t uvlo on - 2 - ? s i f = 10ma, v o > 5v uvlo turn off delay t uvlo off - 0.3 - ? s i f = 10ma, v o < 5v common mode transient immunity at high level output | cm h | 10 - - kv/ ? s i f = 7 to 16ma v cm = 1500v t a = 25c v cc = 30v 24 5 common mode transient immunity at low level output | cm l | 10 - - kv/ ? s v f = 0v v cm = 1500v t a = 25c v cc = 30v 6 notes 1. maximum pulse width = 10 ? s, maximum duty cycle = 0.2% 2. device is considered a two-terminal device: pins 1, 2, 3, and 4 shorted together, and pins 5, 6, 7, and 8 shorted togethe r 3. in accordance with ul 1577, each optocoupler is proof test ed by applying an insulat ion test voltage 6000 v rms for one second (leakage current less than 5 ? a) 4. the difference between t phl and t plh between any two SG8080 devices under the same test conditions 5. common mode transient immuni ty in high stage is the maximu m tolerable negative dv cm /dt on the trailing edge of the common mode impulse signal, v cm , to assure that the output will remain high 6. common mode transient immunity in low stage is the maximum tolerable positive dv cm /dt on the leading edge of the common mode impulse signal, v cm , to assure that the output will remain low 7. pulse width distortion is defined as | t phl C t plh | for any given device 8. 260c for 10 seconds. refer to the lead free solder reflo w profile for more information 9. derate linearly above 70c free air temperature at a rate of 0.47mw / c 10. derate linearly above 70c free air temperature at a rate of 4.8mw / c
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 5 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r figure 5: output low current vs. temperature (c) figure 6: output low voltage drop vs. low current figure 2: output high current vs. temperature (c) figure 3: output high voltage drop vs. high current figure 4: output low voltage vs. temperature (c) figure 1: output high voltage dr op vs. temperature (c) SG8080 performance & characteristics plots, t a = 25c (unless otherwise specified) ambient temperature C t a (c) (v oh C v cc ) C output high voltage drop (v) ambient temperature C t a (c) i oh C output high current (a) i oh C output high current (a) (v oh C v cc ) C output high voltage drop (v) ambient temperature C t a (c) v ol C output low voltage drop (v) ambient temperature C t a (c) i ol C output low current (a) i ol C output low current (a) v ol C output low voltage drop (v)
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 6 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r SG8080 performance & characteristics plots, continued t a = 25c (unless otherwise specified) figure 7: supply current (i cc ) vs. temperature (c) figure 8: supply current (i cc ) vs. supply voltage (v cc ) figure 10: propagation delay (t p ) vs. supply voltage (v cc ) figure 9: low to high input current threshold (i flh ) vs. temperature (c) figure 11: propagation delay (t p ) vs. forward current (i f ) figure 12: propagation delay (t p ) vs. temperature (c) ambient temperature C t a (c) i cc C supply current (ma) v cc C supply voltage (v) i cc C supply current (ma) ambient temperature C t a (c) i flh C low to high input current threshold (ma) v cc C supply voltage (v) t p C propagation delay (ns) i f C forward current (ma) t p C propagation delay (ns) ambient temperature C t a (c) t p C propagation delay (ns)
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 7 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r figure 13: propagation delay (t p ) vs. series load resistance (r g ) figure 14: propagation delay (t p ) vs. load capacitance (c g ) figure 16: transfer characteristics figure 15: forward current (i f ) vs. forward voltage (v f ) rg C load resistance () t p C propagation delay (ns) cg C load capacitance (nf) t p C propagation delay (ns) v f C forward voltage (v) i f C forward current (ma) i f C forward current (ma) v o C output voltage (v) SG8080 performance & characteristics plots, continued t a = 25c (unless otherwise specified)
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 8 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r SG8080 electrical test circuits figure 17: high level output voltage (v oh ) test circuit figure 18: low level output voltage (v ol ) test circuit figure 20: low level output current (i ol ) test circuit figure 19: high level output current (i oh ) test circuit figure 21: input threshold current (i flh ) test circuit figure 22: uvlo test circuit i f = 7ma to 16ma pw = 10 ? s period = 5ms i f = 7ma to 16ma pw = 4.99ms period = 5ms i f = 10ma i f = 10ma
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 9 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r SG8080 electrical test circuits, continued figure 23: rise time (t r ), fall time (t f ), and propagation delay times (t plh and t phl ) test circuit & waveforms figure 24: cmr test circuit & waveforms
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 10 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r process step description parameter a preheat start temperature (oc) 150oc b preheat finish temperature (oc) 180oc c preheat time (s) 90 - 120s d melting temperat ure (oc) 230oc e time above melting te mperature (s) 30s f peak temperature, at terminal (oc) 260oc g dwell time at peak temperature (s) 10s h cool-down (oc/s) <6oc/s SG8080 solder reflow temperature profile recommendations (1) infrared reflow: refer to the following figure as an example of an optimal tempe rature profile for single occurrence infrared reflow. soldering process should not exceed temperature or time limits expressed herein. surface temperature of device package should not exceed 250oc: a b c d f e g h (2) wave solder: (3) hand solder: maximum temperature: 260oc (at terminal) maximum time: 10s pre-heating: 100 - 150oc (30 - 90s) single occurrence maximum temperature: 350oc (at tip of soldering iron) maximum time: 3s single occurrence
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 11 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r SG8080 package dimensions 8 pin dip package note: all dimensions in millimeters [mm] with inches in parenthesis ()
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 12 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r SG8080 package dimensions 8 pin wide lead space package (-h) note: all dimensions in millimeters [mm] with inches in parenthesis ()
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 13 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r SG8080 package dimensions 8 pin smd surface mount package (-s) note: all dimensions in millimeters [mm] with inches in parenthesis ()
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 14 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r SG8080 packaging specifications tape & reel specifications (t&r) note: all dimensions in millimeters [mm] with inches in parenthesis () specification symbol dimensions, mm ( inches ) tape width w 16 ? 0.3 ( 0.63 ) sprocket hole pitch p0 4 ? 0.1 ( 0.15 ) compartment location f p2 7.5 ? 0.1 ( 0.295 ) 2 ? 0.1 ( 0.079 ) compartment pitch p1 12 ? 0.1 ( 0.472 )
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 15 of 15 SG8080 /h/s/tr rev03 (02/02/2015) 002352 SG8080 2a output current igbt gate dri ve optocouple r note: all weights above are in grams, and include packaging materials where applicable device single unit full tube (50pcs) full pouch (10 tubes) full reel (1000pcs) SG8080 0.54 48 490 - SG8080-s 0.53 46 470 - SG8080-h 0.55 49 500 - SG8080-str 0.53 - - 480 solid state optronics (sso) makes no warranties or representations with regards to the completeness and accuracy of this docume nt. sso reserves the right to make changes to product description, specifications at any time without further notices. sso shall not assume any liability arising out of the application or use of any product or circui t described herein. neither c ircuit patent licenses nor indemnity are expressed or implied. except as specified in sso?s standard te rms & conditions, sso disclaims liability fo r consequential or other damage, and we mak e no other warranty, expressed or implied, including merchantability and fitness for particular use. disclaimer sso does not authorize use of its devices in life support applicat ions wherein failure or malfunc tion of a device may lead to p ersonal injury or death. users of sso devices in life support applications assume all risks of such use and agree to indemnify sso against any a nd all damages resulting from such use. life s upport devices are defined as devices or syst ems which, (a) are intended for surgical i mplant into the body, or (b) support or sustain life, and (c) whose failure to per form when used properly in accordance with instructions for u se can be reasonably expected to result in significant injury to the user, or (d) a critical component of a life support device or system whose failure can be reasonably expected to cause failure of the life support devic e or system, or to affect its safety or effectiveness. life support policy SG8080 packaging marking SG8080 package weights


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